China Begins Pre-Series Production of HBM3E Contract

As the US-imposed sanctions left China deprived of advanced microchips, China's ChangXin Memory Technologies (CXMT) took a significant step. One.uz reports.

The company has begun pre-series production of HBM3E memory, which is in high demand for AI accelerators and high-performance computing systems. This information was published on ixbt.com.

At the current stage, CXMT is verifying the stability of the new technological process, ensuring the yield of viable wafers, and carrying out the packaging of multi-layer memory. The compliance of the finished products with the required specifications is also being tested.

If the adoption of the technological process is successfully completed, a transition to mass production is expected in the coming weeks. This could be a significant turning point for China's semiconductor industry.

CXMT is also expanding its production capacity. According to sources, by the end of the year, the company's facilities should reach a total capacity of processing approximately 350,000 silicon wafers per month.

Further expansion is planned for the coming years. The specific technical specifications of HBM3E memory have not yet been disclosed, but it is assumed to meet the standard metrics characteristic of this generation.

Typically, such HBM solutions utilize a 1024-bit interface per stack, and the data transfer rate can be approximately 9.6 Gbit/s or higher per pin. When operating at 9.6 Gbit/s, the bandwidth of a single stack can reach up to 1.2 terabytes per second.

The memory capacity is determined by the size of the DRAM dies and the number of layers used. For example, when 24-gigabit dies are used, an eight-layer stack can provide 24 GB of memory.

Such high performance is of significant importance for modern computing systems.